A new I-V model for light-emitting devices with a quantum well

被引：10

作者：

Lee, Chin C. ^{[1
]}

Chen, Winnie V. ^{[1
]}

Park, Jeong ^{[1
]}

机构：

[1] Univ Calif Irvine, Irvine, CA 92697 USA

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 11期

关键词：

light-emitting diodes; diodes; semiconductor lasers; p-n junctions; quantum well devices; P-N-JUNCTIONS;

D O I：

10.1016/j.mejo.2006.07.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a new current versus voltage model for light-emitting devices with a quantum well where electrons and holes are injected and recombine. The current is entirely caused by the recombination of electrons and holes. Historically, the equation used for light-emitting diodes (LEDs) and laser diodes (LDs) has been the renowned Sah-Noyce-Shockley (SNS) diode equation. In this equation at typical forward bias condition, most of the current is caused by the diffusion of carriers over the depletion region. It is clear that this condition is different from what actually happen in LEDs and LDs. We thus looked into the fundamental of carrier transport and developed a new model for devices with a quantum well. Based on the new model, calculated I-V curves agree well with measurement results of GaN/sapphire LEDs with GaInN quantum wells. In calculation, junction temperature T-j rather than case temperature T-c is used to achieve better agreement. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1335 / 1338

页数：4

共 14 条

[1] Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes [J].