Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films

被引：285

作者：

Angerer, H

Brunner, D

Freudenberg, F

Ambacher, O

Stutzmann, M

Hopler, R

Metzger, T

Born, E

Dollinger, G

Bergmaier, A

Karsch, S

Korner, HJ

机构：

[1] TECH UNIV MUNICH, LEHRSTUHL ANGEW MINERAL & GEOCHEM, D-85748 GARCHING, GERMANY

[2] TECH UNIV MUNICH, PHYS DEPT E12, D-85748 GARCHING, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.119949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0 less than or equal to x less than or equal to 1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of alpha, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV. (C) 1997 American Institute of Physics.

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页码：1504 / 1506

页数：3

相关论文

共 23 条

[1] ELECTRONIC-STRUCTURE AND EQUILIBRIUM PROPERTIES OF GAXAL1-XN ALLOYS [J].

ALBANESI, EA ;

LAMBRECHT, WRL ;

SEGALL, B .

PHYSICAL REVIEW B, 1993, 48 (24) :17841-17847

[2] SENSITIVE PHOTOTHERMAL DEFLECTION TECHNIQUE FOR MEASURING ABSORPTION IN OPTICALLY THIN MEDIA [J].

BOCCARA, AC ;

FOURNIER, D ;

JACKSON, W ;

AMER, NM .

OPTICS LETTERS, 1980, 5 (09) :377-379

[3] RELAXATION PROCESS OF THE THERMAL STRAIN IN THE GAN/ALPHA-AL2O3 HETEROSTRUCTURE AND DETERMINATION OF THE INTRINSIC LATTICE-CONSTANTS OF GAN FREE FROM THE STRAIN [J].

DETCHPROHM, T ;

HIRAMATSU, K ;

ITOH, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1454-L1456

[4] HIGH-RESOLUTION DEPTH PROFILING OF LIGHT-ELEMENTS [J].

DOLLINGER, G ;

FAESTERMANN, T ;

MAIERKOMOR, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4) :422-427

[5] DEPTH MICROSCOPY AT INTERFACES [J].

DOLLINGER, G ;

FAESTERMANN, T ;

FREY, CM ;

BERGMAIER, A ;

SCHWABEDISSEN, E ;

FISCHER, T ;

SCHWARZ, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4) :786-789

[6] PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KHAN, MA ;

SKOGMAN, RA ;

SCHULZE, RG ;

GERSHENZON, M .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :492-494

[7] EDGE EMISSION OF ALXGA1-XN [J].

KHAN, MRH ;

KOIDE, Y ;

ITOH, H ;

SAWAKI, N ;

AKASAKI, I .

SOLID STATE COMMUNICATIONS, 1986, 60 (06) :509-512

[8] Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN [J].

Kim, K ;

Lambrecht, WRL ;

Segall, B .

PHYSICAL REVIEW B, 1996, 53 (24) :16310-16326

[9] DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE [J].

KINGSLEY, CR ;

WHITAKER, TJ ;

WEE, ATS ;

JACKMAN, RB ;

FOORD, JS .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3) :78-82

[10] ENERGY BAND-GAP BOWING PARAMETER IN AN ALXGA1-XN ALLOY [J].

KOIDE, Y ;

ITOH, H ;

KHAN, MRH ;

HIRAMATU, K ;

SAWAKI, N ;

AKASAKI, I .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4540-4543