Violet and orange luminescence from Ge-implanted SiO2 layers

被引:14
作者
Lee, WS
Jeong, JY
Kim, HB
Chae, KH
Whang, CN
Im, S [1 ]
Song, JH
机构
[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea
[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷
关键词
Ge; SiO2; implantation; photoluminescence (PL); carrier-transport;
D O I
10.1016/S0921-5107(99)00273-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ge ions of 100 keV were implanted into a 120-nm thick SiO2 layer at room temperature (RT), 300, and 500 degrees C. The employed doses of Ge ion were 5 x 10(15), 1 x 10(16), 5 x 10(16), and 1 x 10(17) cm(-2). Maximum intensity of sharp violet photoluminescence (PL) from the sample implanted at room temperature with a dose of 1 x 10(16) cm(-2) is observed after the sample has been annealed at 500 degrees C for 2 h. Broad orange luminescence is also shown in hot-implanted samples besides the violet. Both are known as defect-related luminescences. As observed by current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electoluminescence (EL) at only reverse bias region while a nanocrystal-related sample obtained by an annealing at 1100 degrees C for 4 h shows the leakages at both the reverse and the forward region. The carrier-transport and EL mechanisms are explained from the PL and I-V results. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:474 / 478
页数:5
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