Modifications of an internal friction apparatus for the study of dislocation motion in semiconductors

被引:0
作者
Tondellier, T [1 ]
Woirgard, J [1 ]
Demenet, JL [1 ]
机构
[1] Univ Poitiers, CNRS, Met Phys Lab, UMR 6630, F-86962 Futuroscope, France
来源
DEFECTS AND DIFFUSION IN CERAMICS: AN ANNUAL RETROSPECTIVE IV | 2002年 / 206-2卷
关键词
dislocation; internal friction; semiconductors; vibrating reed;
D O I
10.4028/www.scientific.net/DDF.206-207.175
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A modified vibrating reed version for measurement of internal friction as a function of both temperature and vibration frequency is proposed. The system is equivalent to a forced torsion pendulum with an available frequency range from 10(-4) Up to 10 Hz and a working temperature up to 900degreesC. The overall dimensions of the apparatus are made to operate on very small and brittle samples as semiconductors. The reed is electrostatically driven and produces shear stress in a localized part of specially shaped specimens. The detection measurements are based on a capacitive method, which allows accuracy in phase lags as low as 10(-5)-10(-4) radian.
引用
收藏
页码:175 / 178
页数:4
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