First-principles studies of hydrogenated Si(111)-7x7

被引:25
作者
Alfonso, DR
Noguez, C
Drabold, DA
Ulloa, SE
机构
[1] OHIO UNIV,CONDENSED MATTER & SURFACE SCI PROGRAM,ATHENS,OH 45701
[2] OHIO UNIV,DEPT PHYS & ASTRON,ATHENS,OH 45701
[3] UNIV NACL AUTONOMA MEXICO,INST FIS,MEXICO CITY 01000,DF,MEXICO
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 11期
关键词
D O I
10.1103/PhysRevB.54.8028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The relaxed, geometries and electronic properties of the hydrogenated phases of the Si(111)-7x7 surface are studied using first principles molecular dynamics. A monohydride phase, with one H per dangling bond adsorbed on the bare surface, is found to be energetically favorable. Another phase where 43 hydrogens saturate the dangling bonds created by the removal of the adatoms from the clean surface is found to be nearly equivalent energetically. Experimental scanning tunneling microscopy and differential-reflectance characteristics of the hydrogenated surfaces agree well with the calculated features.
引用
收藏
页码:8028 / 8032
页数:5
相关论文
共 31 条
[1]   ABINITIO MOLECULAR DYNAMIC RELAXATION APPLIED TO THE SILICON(111)-5X5 SURFACE RECONSTRUCTION [J].
ADAMS, GB ;
SANKEY, OF .
PHYSICAL REVIEW LETTERS, 1991, 67 (07) :867-870
[2]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[3]   SELF-ENERGY EFFECTS ON THE SURFACE-STATE ENERGIES OF H-SI(111)1X1 [J].
BLASE, X ;
ZHU, XJ ;
LOUIE, SG .
PHYSICAL REVIEW B, 1994, 49 (07) :4973-4980
[4]   ABINITIO THEORY OF THE SI(111)-(7X7) SURFACE RECONSTRUCTION - A CHALLENGE FOR MASSIVELY PARALLEL COMPUTATION [J].
BROMMER, KD ;
NEEDELS, M ;
LARSON, BE ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1355-1358
[5]   TEMPERATURE-DEPENDENT SURFACE-STATES AND TRANSITIONS OF SI(111)-7X7 [J].
DEMUTH, JE ;
PERSSON, BNJ ;
SCHELLSOROKIN, AJ .
PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2214-2217
[6]   NORM-CONSERVING PSEUDOPOTENTIALS [J].
HAMANN, DR ;
SCHLUTER, M ;
CHIANG, C .
PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497
[7]  
HAMMERS RJ, 1986, PHYS REV LETT, V56, P1972
[8]   ELECTRONIC-STRUCTURE AND ITS DEPENDENCE ON LOCAL ORDER FOR H/SI(111)-(1X1) SURFACES [J].
HRICOVINI, K ;
GUNTHER, R ;
THIRY, P ;
TALEBIBRAHIMI, A ;
INDLEKOFER, G ;
BONNET, JE ;
DUMAS, P ;
PETROFF, Y ;
BLASE, X ;
ZHU, XJ ;
LOUIE, SG ;
CHABAL, YJ ;
THIRY, PA .
PHYSICAL REVIEW LETTERS, 1993, 70 (13) :1992-1995
[9]   ATOMIC GEOMETRY OF SI(111) 7X7 BY DYNAMICAL LOW-ENERGY ELECTRON-DIFFRACTION [J].
HUANG, H ;
TONG, SY ;
PACKARD, WE ;
WEBB, MB .
PHYSICS LETTERS A, 1988, 130 (03) :166-170
[10]   ABINITIO LINEAR COMBINATION OF PSEUDO-ATOMIC-ORBITAL SCHEME FOR THE ELECTRONIC-PROPERTIES OF SEMICONDUCTORS - RESULTS FOR 10 MATERIALS [J].
JANSEN, RW ;
SANKEY, OF .
PHYSICAL REVIEW B, 1987, 36 (12) :6520-6531