High performance photoresponse of transparent β-Ga2O3 film prepared by polymer-assisted deposition

被引：10

作者：

Dai, Xu ^{[1
]}

Zheng, Quan ^{[1
]}

Zhang, Xi ^{[1
]}

Wang, Yujun ^{[1
]}

Ren, Hongtao ^{[2
]}

Xiang, Gang ^{[1
]}

机构：

[1] Sichuan Univ, Coll Phys, Chengdu 610000, Peoples R China

[2] Liaocheng Univ, Sch Mat Sci & Engn, Liaocheng 252000, Shandong, Peoples R China

来源：

MATERIALS LETTERS | 2021年 / 284卷

基金：

中国国家自然科学基金;

关键词：

Ga2O3; Thin films; Polymer-assisted deposition; Optical materials and properties; Photodetector;

D O I：

10.1016/j.matlet.2020.128912

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the study on the structural and photoelectric properties of beta-Ga2O3 films on sapphire substrates prepared by polymer-assisted deposition (PAD). The characterizations reveal that the beta-Ga2O3 films are smooth and composed of crystals with single preferential orientation of (-201). As the low defect density, the solar-blind ultraviolet (UV) photodetector based on the beta-Ga2O3 films shows highperformance photoresponse behaviors with lower dark current and faster speeds. Our results suggest that the beta-Ga2O3 films prepared by low-cost PAD have great potentials for optical and optoelectronic applications. (c) 2020 Published by Elsevier B.V.

引用

页数：4

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