Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

被引：38

作者：

Aga, Fekadu Gochole ^{[1
]}

Woo, Jiyong ^{[1
]}

Song, Jeonghwan ^{[1
]}

Park, Jaehyuk ^{[1
]}

Lim, Seokjae ^{[1
]}

Sung, Changhyuck ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongarm Ro, Pohang 790784, South Korea

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 11期

关键词：

multilevel; conductive bridge random access memory (CBRAM); resistive switching; quantized conductance; RESISTIVE SWITCHING MEMORY;

D O I：

10.1088/1361-6528/aa5baf

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable and reproducible quantized conductance states with integer multiples of fundamental conductance obtained by optimizing the voltage ramping rate and the Ti-diffusion barrier (DB) at the Cu/HfO2 interface. Owing to controlled diffusion of Cu ions by the Ti-DB and the optimized ramping rate, through which it was possible to control the time delay of Cu ion reduction, more than seven levels of discrete conductance states were clearly observed. Analytical modeling was performed to determine the rate-limiting step in filament growth based on an electrochemical redox reaction. Our understanding of the fundamental mechanisms of quantized conductance behaviors provide a promising future for the multi-bit CBRAM device.

引用

页数：6

共 27 条

[1] Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM) [J].