A low cost and nontoxic absorber for intermediate band solar cell based on P-doped Cu2SiS3: A first-principles study

被引：3

作者：

Xue, Yang ^{[1
]}

Ding, Lijie ^{[1
]}

Zhou, Wentong ^{[1
]}

Kuang, Wei ^{[1
]}

Ning, Hua ^{[1
]}

Liang, Xianqing ^{[1
]}

Zhou, Wenzheng ^{[1
]}

Guo, Jin ^{[1
]}

Huang, Dan ^{[1
]}

机构：

[1] Guangxi Univ, Guangxi Key Lab Proc Non Ferrous Metall & Feature, Guangxi Coll & Univ Key Lab Novel Energy Mat & Re, Guangxi Novel Battery Mat Res Ctr Engn Technol,Sc, Nanning 530004, Peoples R China

来源：

THIN SOLID FILMS | 2021年 / 718卷

基金：

中国国家自然科学基金;

关键词：

Electronic structure; Intermediate band solar cell; Copper silicon sulfide; Nontoxic absorber; PHOTOVOLTAIC MATERIAL; N-TYPE; EFFICIENCY; ZNO;

D O I：

10.1016/j.tsf.2020.138473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The exploration on the absorber with low cost and nontoxic elements to realize highly efficient solar cells is still under way. Here, P-doped Cu2SiS3 as a cheap and poisonless compound is proposed as a promising absorber for intermediate band solar cell from our first-principles study. After P substituting at Si site in Cu2SiS3, a partially-filled intermediate band is introduced in the forbidden band of Cu2SiS3. Consequently, thanks to the intermediate band served as a stepping stone for the light absorption, the three-photon absorption is realized and then the corresponding absorption coefficient of P-doped Cu2SiS3 can cover the solar light spectrum efficiently.

引用

页数：6

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