Voltage-Dependent Bulk Resistivity of SrTiO3:Mg Ceramics

被引：26

作者：

Gil Escrig, Lidon ^{[1
]}

Prades, Marta ^{[1
]}

Beltran, Hector ^{[1
]}

Cordoncillo, Eloisa ^{[1
]}

Maso, Nahum ^{[2
]}

West, Anthony R. ^{[2
]}

机构：

[1] Univ Jaume 1, Dept Quim Inorgan & Organ, Castellon de La Plana 12071, Spain

[2] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2014年 / 97卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

RESISTANCE DEGRADATION BEHAVIOR; DC ELECTRICAL DEGRADATION; ACCEPTOR MG CONCENTRATION; PEROVSKITE-TYPE TITANATES; DOPED STRONTIUM-TITANATE; SINGLE-CRYSTALS; BATIO3; IMPEDANCE; FIELD; ELECTROCOLORATION;

D O I：

10.1111/jace.13004

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single phase ceramics of composition Sr(Ti1-xMgx)O3-x: 0x0.01 were prepared by sol-gel synthesis and characterized by X-ray diffraction, scanning electron microscopy, impedance spectroscopy, and current-voltage measurements. The bulk and grain-boundary conductivities increase on application of a small dc bias voltage in the range 3-200V/cm and at temperatures in the range 150 degrees C-800 degrees C. A qualitatively similar increase in conductivity occurs on increasingPO2 in the surrounding atmosphere, which shows that conduction is p type. The conductivity increase is reversible on removal of the dc bias or on reducing PO2 and is not observed in undoped SrTiO3. It is an intrinsic property of the bulk material, differs from the voltage-dependent effects observed with varistors and is attributed to changes in redox equilibria between oxygen species at the surface which cause changes in carrier concentration in the interior. A capacitive model of this low-field dc bias effect is presented and compared with a memristive model of high field resistance degradation.

引用

页码：2815 / 2824

页数：10

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