Surface Band Tuning of Bi2Te3 Topological Insulator Thin Films by Gas Adsorption

被引：7

作者：

Liu, N. ^{[1
,2
,3
]}

Ju, C. ^{[1
,2
]}

Cheng, X. M. ^{[1
,2
]}

Miao, X. S. ^{[1
,2
,3
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[2] Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

[3] Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 09期

关键词：

Topological insulator; surface band tuning; gas adsorption; Dirac cone; TRANSPORT; BI2SE3; LIMIT; STATE;

D O I：

10.1007/s11664-014-3271-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface band tuning of the topological insulator Bi2Te3 by gas adsorption is investigated on the basis of aba initio pound calculations. It is shown that, with the increase of Te vacancies, the topologically non-trivial surface state which originates from the second quintuple layer coexists with the topologically trivial surface. Molecular dynamics simulation reveals that O-2 and NO2 easily occupy the Te vacancy sites and further bind to the Bi atoms from the second atomic layer. Moreover, the surface band with the Dirac cone is observed. Our results suggest that the topological surface state can be effectively regulated by NO2 and O-2 adsorption.

引用

页码：3105 / 3109

页数：5

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