Influence of Ge and GeO2 on the microstructure and varistor properties of TiO2-Ta2O5-CaCO3 ceramics

被引:5
作者
Kang, Kunyong [1 ]
Zheng, Zhifeng [1 ]
Xie, Sida [1 ]
Zhang, Jun [1 ]
Xu, Kaimeng [1 ]
Tao, Lei [1 ]
Rong, Xuequan [2 ]
Xu, Zhefeng [3 ]
Yan, Jikang [3 ,4 ,5 ]
Gan, Guoyou [3 ,4 ,5 ]
机构
[1] Southwest Forestry Univ, Coll Mat Engn, Kunming 650224, Peoples R China
[2] Univ Sci & Technol Beijing, Collaborat Innovat Ctr Steel Technol, Beijing 100083, Peoples R China
[3] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Peoples R China
[4] Key Lab Adv Mat Yunnan Prov, Kunming 650093, Peoples R China
[5] Minist Educ, Key Lab Adv Mat Precious Nonferrous Met, Kunming 650093, Peoples R China
基金
中国国家自然科学基金;
关键词
TiO2; varistor; Microstructure; Varistor property; Co-doping; Ge; GeO2; NONLINEAR ELECTRICAL BEHAVIOR; DIELECTRIC-PROPERTIES; TEMPERATURE; (CA; BARIUM; TA2O5; SI;
D O I
10.1016/j.ceramint.2016.09.141
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study investigated the effect of elemental crystal Ge or/and GeO2 doping on the microstructure and varistor properties of TiO2-Ta2O5-CaCO3 varistor ceramics, which were prepared via the traditional ball milling molding-sintering process. X-ray diffraction, scanning electron microscopy, scanning transmission electron microscopy-energy dispersive X-ray spectroscopy, scanning electron microscopy-energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy demonstrated that co-doping with Ge and GeO2 changed the microstructure of TiO2-Ta2O5-CaCO3 ceramics, thereby increasing the nonlinear coefficient and decreasing the breakdown voltage. The optimum doping concentrations of Ta2O5, CaCO3, Ge, and GeO2 exhibited the highest nonlinear coefficient (alpha=14.6), a lower breakdown voltage (E-B=18.7 V mm(-1)), the least leakage current (J(L)=10.5 yA cm(-2)), and the highest grain boundary barrier (Phi(B)=1.05 eV). In addition, Ge and GeO2 function as sintering aids, which reduce the sintering temperature because of their low melting points.
引用
收藏
页码:3465 / 3474
页数:10
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