The physical origin of random telegraph noise after dielectric breakdown

被引：20

作者：

Li, X. ^{[1
,2
]}

Tung, C. H. ^{[2
]}

Pey, K. L. ^{[1
]}

Lo, V. L. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Ctr Microelect, Singapore 639798, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

dielectric materials; electric breakdown; electron energy loss spectra; leakage currents; MOSFET; percolation; random noise; scanning electron microscopy; semiconductor device noise; silicon compounds; switching; transmission electron microscopy; PROGRESSIVE BREAKDOWN;

D O I：

10.1063/1.3114410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Our results show that the physical origin of the digital telegraph noise observed in the early stage of the progressive breakdown is originated from the defective oxide with low oxygen concentrations. The outer shells of the percolation path contribute significantly to the random switching of current levels as a result of the ON/OFF state of percolation path. The formation of a nanosize conductive Si path in the inner shell of the percolation path pushes the oxide to a high leakage state and suppresses the visibility of the digital noise.

引用

页数：3

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