Reaction-Bonded Boron Carbide/Magnesium-Silicon Composites

被引：13

作者：

Cafri, Matan ^{[1
]}

Malka, Alon ^{[1
]}

Dilman, Helen ^{[1
]}

Dariel, Moshe P. ^{[1
]}

Frage, Nahum ^{[1
]}

机构：

[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

来源：

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2014年 / 11卷 / 02期

关键词：

MECHANICAL-PROPERTIES; MICROSTRUCTURE;

D O I：

10.1111/ijac.12085

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Reaction-bonded boron carbide was manufactured by infiltrating porous boron carbide preforms at 1273K with a Mg-Si eutectic alloy. The resulting composite material consists, in addition to the original B4C, of SiC, Mg2Si, and a Mg-rich complex boride/carbide Mg-x(Al,Si)(y)(B,C)(z) phase. The composites display high hardness (1700HV), Young's modulus (356MPa) and a moderate bending strength (230MPa). The ballistic efficiency (of about 6.7), as determined by the depth of penetration method, is much higher than that of alumina and similar to that of silicon-infiltrated reaction-bonded composites.

引用

页码：273 / 279

页数：7

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