Gamma-ray detectors based on GaAs<Cr> for nanostructural investigations

被引：1
|
作者：
Ayzenshtat, G. I. [1 ]
Budnitskii, D. L. [1 ]
Mokeev, D. Yu.
Novikov, V. A.
Syresin, E. M.
Tolbanov, O. P. [1 ]
Tyazhev, A. V. [1 ]
Shelkov, G. A. [2 ]
机构：
[1] Tomsk State Univ, VD Kuznetsov Siberian Phys Tech Inst, Tomsk 634050, Russia
[2] Joint Inst Nucl Res, Dubna, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2008年 / 51卷 / 10期
关键词：
D O I：
10.1007/s11182-009-9141-7
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The progress in nanotechnologies has been largely due to the advent of a new generation of gamma-ray sources and position detectors, which can ensure both coordinate and temporal measurements within the nanoand femtoranges. The paper offers scientific and engineering solutions related to designing detector materials and structures for detecting single quanta of x- and gamma-rays and high-energy charged particles. These are multielement position detectors of a new generation for nanostructure imaging and examination in gamma rays.
引用
收藏
页码：1037 / 1052
页数：16
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