Dependence of Si/SnO2 Heterojunction Properties on Growth Temperature and Type of Silicon

被引:3
作者
Maleki, M. [1 ]
Rozati, Seyed M. [1 ]
机构
[1] Univ Guilan, Fac Sci, Dept Phys, CVD Lab, Rasht, Iran
关键词
Atmospheric pressure (AP)CVD; Diodes; Heterojunction; p-type Si; Thin film silicon solar cell; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SNO2; DIODES;
D O I
10.1002/cvde.201207014
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Polycrystalline pure tin oxide thin films of tetragonal rutile structures are deposited on two kinds of single-crystal and polycrystalline p-type Si at three substrate temperatures of 300, 400, and 500 degrees C. Structural, electrical, and optical properties of these thin films are characterized by X-ray diffraction (XRD), two-point probe method, and UV-vis spectrophotometry, respectively. I-V measurements of these heterojunctions show that the barrier height and series resistance will increase with increasing substrate temperature in single-crystal Si, while in polycrystalline Si, they will decrease. These heterojunctions are found to be rectifying with a maximum forward-to-reverse current ratio of about 1000 in the applied voltage range -4V to +4V for single-crystal Si/SnO2.
引用
收藏
页码:290 / 294
页数:5
相关论文
共 20 条
  • [1] Electrical characteristics of n-ZnO/p-Si heterojunction diodes grown by pulsed laser deposition at different oxygen pressures
    Ajimsha, R. S.
    Jayaraj, M. K.
    Kukreja, L. M.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (05) : 770 - 775
  • [2] The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes
    Altindal, S
    Karadeniz, S
    Tugluoglu, N
    Tataroglu, A
    [J]. SOLID-STATE ELECTRONICS, 2003, 47 (10) : 1847 - 1854
  • [3] Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction
    Cannella, G.
    Principato, F.
    Foti, M.
    Di Marco, S.
    Grasso, A.
    Lombardo, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [4] TRANSPARENT CONDUCTORS - A STATUS REVIEW
    CHOPRA, KL
    MAJOR, S
    PANDYA, DK
    [J]. THIN SOLID FILMS, 1983, 102 (01) : 1 - 46
  • [5] Amorphous silicon solar cells made with SnO2:F TCO films deposited by atmospheric pressure CVD
    Dagkaldiran, Ue
    Gordijn, A.
    Finger, F.
    Yates, H. M.
    Evans, P.
    Sheel, D. W.
    Remes, Z.
    Vanecek, M.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 159-60 : 6 - 9
  • [6] Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen
    Haga, K
    Wijesena, PS
    Watanabe, H
    [J]. APPLIED SURFACE SCIENCE, 2001, 169 : 504 - 507
  • [7] Fabrication and characterization of transparent p-n and p-i-n heterojunctions prepared by spray pyrolysis technique: Effect of post-annealing process and intrinsic middle layer
    Juybari, Hasan Azimi
    Bagheri-Mohagheghi, Mohammad-Mehdi
    Ketabi, Seyed Ahmad
    Shokooh-Saremi, Mehrdad
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01) : 93 - 96
  • [8] A SnO2 Nanopartiele/Nanobelt and Si Heterojunction Light-Emitting Diode
    Ling, Bo
    Sun, Xiao Wei
    Zhao, Jun Liang
    Ke, Chang
    Tan, Swee Tiam
    Chen, Rui
    Sun, Han Dong
    Dong, Zhi Li
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (43) : 18390 - 18395
  • [9] An economic CVD technique for pure SnO2 thin films deposition: Temperature effects
    Maleki, M.
    Rozati, S. M.
    [J]. BULLETIN OF MATERIALS SCIENCE, 2013, 36 (02) : 217 - 221
  • [10] Hopping versus bulk conductivity in transparent oxides:: 12CaO•7Al2O3
    Medvedeva, JE
    Freeman, AJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (06) : 955 - 957