Atmospheric pressure (AP)CVD;
Diodes;
Heterojunction;
p-type Si;
Thin film silicon solar cell;
CHEMICAL-VAPOR-DEPOSITION;
THIN-FILMS;
SNO2;
DIODES;
D O I:
10.1002/cvde.201207014
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
Polycrystalline pure tin oxide thin films of tetragonal rutile structures are deposited on two kinds of single-crystal and polycrystalline p-type Si at three substrate temperatures of 300, 400, and 500 degrees C. Structural, electrical, and optical properties of these thin films are characterized by X-ray diffraction (XRD), two-point probe method, and UV-vis spectrophotometry, respectively. I-V measurements of these heterojunctions show that the barrier height and series resistance will increase with increasing substrate temperature in single-crystal Si, while in polycrystalline Si, they will decrease. These heterojunctions are found to be rectifying with a maximum forward-to-reverse current ratio of about 1000 in the applied voltage range -4V to +4V for single-crystal Si/SnO2.