Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

被引：34
作者：
Assaker, R
VandenBogaert, N
Dupret, F
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 180卷 / 3-4期
关键词：
modelling; (dynamic; global); numerical simulation; Czochralski growth; silicon; turbulence; convection; melt flow;
D O I：
10.1016/S0022-0248(97)00240-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A numerical model is developed to perform the dynamic and global simulation of Czochralski growth. The effect of melt convection is taken into account by means of an eddy viscosity flow model, which can represent the mixing effect of flow oscillations on the heat transfer. Our method is used to investigate the dynamics of the growth of a 40 cm silicon crystal.
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收藏
页码：450 / 460
页数：11
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