Formation of a passivating CH3NH3PbI3/PbI2 interface during moderate heating of CH3NH3PbI3 layers

被引：260
|
作者：
Supasai, T. [1 ]
Rujisamphan, N. [2 ]
Ullrich, K. [3 ]
Chemseddine, A. [3 ]
Dittrich, Th. [3 ]
机构：
[1] Kasetsart Univ, Fac Sci, Dept Mat Sci, Bangkok 10900, Thailand
[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[3] Helmholtz Ctr Berlin Mat & Energy, D-14109 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期
关键词：
PHOTOVOLTAGE;
D O I：
10.1063/1.4826116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 degrees C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating. (c) 2013 AIP Publishing LLC.
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页数：3
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