Formation of a passivating CH3NH3PbI3/PbI2 interface during moderate heating of CH3NH3PbI3 layers

被引：260

作者：

Supasai, T. ^{[1
]}

Rujisamphan, N. ^{[2
]}

Ullrich, K. ^{[3
]}

Chemseddine, A. ^{[3
]}

Dittrich, Th. ^{[3
]}

机构：

[1] Kasetsart Univ, Fac Sci, Dept Mat Sci, Bangkok 10900, Thailand

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[3] Helmholtz Ctr Berlin Mat & Energy, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期

关键词：

PHOTOVOLTAGE;

D O I：

10.1063/1.4826116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 degrees C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating. (c) 2013 AIP Publishing LLC.

引用

页数：3

共 9 条

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