Ion scattering Spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction

被引：0
作者：
Park, JY [1 ]
Seo, JH
Kim, JY
Whang, CN
Kim, SS
Choi, DS
Chae, KH
机构：
[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[3] Mokwon Univ, Dept Phys, Taejon 301729, South Korea
[4] Kangweon Natl Univ, Dept Phys, Chunchon 200701, South Korea
[5] Korea Inst Sci & Technol, Div Mat Sci & Technol, Seoul 130650, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 45卷 / 03期
关键词：
surface structure; reconstruction; silicon; carbon; low-energy ion scattering (LEIS);
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). When 100L ethylene (C2H4) was exposed on Si(001.)-(2 x 1) surface at 700 degreesC, Si(001) dimer structures were changed by induced carbon (C) atoms. The experimental CAICISS spectra and simulation results reveal that the reconstructed Si(001)c(4 x 4)-C surface shows good agreement with the missing dimer model, rather than the Si-C heterodimer model, and adsorbed C atoms influence only the reconstructed vertical plane of Si(001) surface. On comparing the azimuthal-scan curves for 100L C/Si(001) with those for clean Si(001), it can be suggested that C atoms occupy the fourth subsurface layer of Si(001) directly below the HB (bridge) site. These results are new evidence supporting the previous studies based on the C incorporation into Si(001) surface with missing dimers and the substitution of the fourth Si layers.
引用
收藏
页码：614 / 618
页数：5
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