Electron and hole storage in self-assembled InAs quantum dots

被引：8
|
作者：
Heinrich, D [1 ]
Hoffmann, J [1 ]
Finley, JJ [1 ]
Zrenner, A [1 ]
Böhm, G [1 ]
Abstreiter, G [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
PHYSICA E | 2000年 / 7卷 / 3-4期
关键词：
quantum dots; memory devices; charge storage; excitation spectroscopy;
D O I：
10.1016/S1386-9477(99)00365-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present results on optically induced storage of electrons or holes in self-assembled InAs quantum dots (QDs). The measurements demonstrate that, following resonant photo-excitation of the QDs, excitons can be ionised selectively leaving either electrons or holes stored. The stored charge is sensed via resistivity changes in a remote 2D carrier system. The induced photo-effect is persistent over time scales of > 8 h at a temperature of 145 K. A series of resonances are observed in the spectral characteristics of the photo-effect. The charging probability was derived from the analysis of the temporal behavior of this charge storage effect. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：484 / 488
页数：5
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