Electron and hole storage in self-assembled InAs quantum dots

被引：8

作者：

Heinrich, D ^{[1
]}

Hoffmann, J ^{[1
]}

Finley, JJ ^{[1
]}

Zrenner, A ^{[1
]}

Böhm, G ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA E | 2000年 / 7卷 / 3-4期

关键词：

quantum dots; memory devices; charge storage; excitation spectroscopy;

D O I：

10.1016/S1386-9477(99)00365-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present results on optically induced storage of electrons or holes in self-assembled InAs quantum dots (QDs). The measurements demonstrate that, following resonant photo-excitation of the QDs, excitons can be ionised selectively leaving either electrons or holes stored. The stored charge is sensed via resistivity changes in a remote 2D carrier system. The induced photo-effect is persistent over time scales of > 8 h at a temperature of 145 K. A series of resonances are observed in the spectral characteristics of the photo-effect. The charging probability was derived from the analysis of the temporal behavior of this charge storage effect. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：484 / 488

页数：5

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