An sd2 hybridized transition-metal monolayer with a hexagonal lattice: reconstruction between the Dirac and kagome bands

被引:5
作者
Zhou, Baozeng [1 ]
Dong, Shengjie [2 ]
Wang, Xiaocha [1 ]
Zhang, Kailiang [1 ]
Mi, Wenbo [3 ]
机构
[1] Tianjin Univ Technol, Tianjin Key Lab Film Elect & Communicate Devices, Sch Elect Informat Engn, Tianjin 300384, Peoples R China
[2] Tianjin Univ, Sch Pharmaceut Sci & Technol, Dept Appl Chem, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Sch Sci, Tianjin 300354, Peoples R China
基金
中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; SPIN HALL INSULATOR; EPITAXIAL-GROWTH; QUANTUM; GRAPHENE; SILICENE;
D O I
10.1039/c6cp08667e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene-like two-dimensional materials have garnered tremendous interest as emerging device materials due to their remarkable properties. However, their applications in spintronics have been limited by the lack of intrinsic magnetism. Here, we perform an ab initio simulation on the structural and electronic properties of several transition-metal (TM) monolayers (TM = Cr, Mo and W) with a honeycomb lattice on a 1/3 monolayer Cl-covered Si(111) surface. Due to the template effect from the halogenated Si substrate, the TM-layers will be maintained in an expanded lattice which is nearly 60% larger than that of the freestanding case. All these isolated TM-layers exhibit ferromagnetic coupling with kagome band structures related to sd(2) hybridization and a strong interfacial interaction may destroy the topological bands. Interestingly, the W-monolayer on the Cl-covered Si substrate shows a half-metallic behavior. A Dirac point formed at the K point in the spin-down channel is located exactly at the Fermi level which is crucial for the realization of a quantum spin Hall state. Moreover, the reconstruction process between the Dirac and kagome bands is discussed in detail, providing an interesting platform to study the interplay between massless Dirac fermions and heavy fermions.
引用
收藏
页码:8046 / 8054
页数:9
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