A low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm

被引：17
作者：
Ohtani, K
Fujita, K
Ohno, H
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7A期
关键词：
quantum cascade laser; superlattice; molecular beam epitaxy; InAs; AlGaSb;
D O I：
10.1143/JJAP.43.L879
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 mum. In order to reduce the threshold current density, InAs/AlGaSb superlattice structures providing large oscillator strength and fast carrier depopulation are used for the active layers. Observed threshold current density at 80 K is 0.92 kA/cm(2), which is about 5 times lower than that of the first InAs/AlSb quantum cascade laser reported earlier. This is among lowest threshold current density of quantum cascade lasers operating in the mid-infrared spectrum region.
引用
收藏
页码：L879 / L881
页数：3
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