Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6x106 cm2/V s

被引：58

作者：

Lu, T. M. ^{[1
]}

Tsui, D. C. ^{[1
]}

Lee, C. -H. ^{[2
,3
]}

Liu, C. W. ^{[2
,3
,4
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[4] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 18期

基金：

美国国家科学基金会;

关键词：

carrier mobility; electron density; elemental semiconductors; Ge-Si alloys; quantum Hall effect; semiconductor quantum wells; silicon; two-dimensional electron gas; HETEROSTRUCTURES;

D O I：

10.1063/1.3127516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of a two-dimensional electron gas (2DEG) in a Si quantum well with mobility 1.6x10(6) cm(2)/V s at carrier densities n >= 1.5x10(11)/cm(2). The 2DEG, which resides in an undoped Si/SiGe heterostructure, is capacitively induced using an insulated-gate field-effect transistor (IGFET) device structure; its mobility is determined from transport and quantum Hall effect measurements at 0.3 K. Our IGFET device makes it now possible to access by transport experiments the low electron density regime down to n similar to 1x10(10)/cm(2).

引用

页数：3

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