High fluence implantation of Cu,Fe and Ti in AlN: Depth profiling by RBS and RNRA

被引：8

作者：

Borowski, M ^{[1
]}

Traverse, A ^{[1
]}

机构：

[1] UNIV PARIS 11, LURE, F-91405 ORSAY, FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 114卷 / 3-4期

关键词：

D O I：

10.1016/0168-583X(96)00147-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

AIN bulk samples were implanted with Cu, Fe and Ti with fluences from 0.4 up to 2.4 x 10(17) ions/cm(2) at energies in the order of 100 keV. A saturation of the number of implanted ions is observed above a critical fluence of 1.5 x 10(17) ions/cm(2) in Cu and Fe implanted samples, while no saturation is seen in the case of Ti implantation. Annealing at 800 degrees C for 1 h under vacuum causes a loss of Cu from the matrix. In the case of Fe and Ti the RES profile of the implanted ions shows a narrowing and an increase of the maximum concentration is observed after the thermal treatment. Combination of RES and RNRA depth profiling allowed us to explain the latter behavior by an Oswald ripening process. To explain the remaining concentration in the sample, an interpretation is discussed in terms of sputtering and chemical bonds between the implanted ions and the matrix atoms.

引用

页码：269 / 275

页数：7

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