Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack

被引：13

作者：

Battaglia, Jean-Luc ^{[1
]}

Kusiak, Andrzej ^{[1
]}

Saci, Abdelhak ^{[1
]}

Fallica, Roberto ^{[2
]}

Lamperti, Alessio ^{[2
]}

Wiemer, Claudia ^{[2
]}

机构：

[1] Univ Bordeaux, UMR 5295, Lab I2M, F-33405 Talence, France

[2] CNR, IMM, Lab MDM, I-20864 Agrate Brianza, Italy

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 12期

关键词：

PHASE-CHANGE MATERIAL; BOUNDARY RESISTANCE; FILMS; MEMORY;

D O I：

10.1063/1.4896325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the dependence of the thermal resistance of TiN/Ge2Sb2Te5 stacks on Si in the presence or not of a thin Ti interfacial layer. While for TiN/Ge2Sb2Te5 almost ideal thermal properties of the interfaces are found, a different behaviour is measured for TiN/Ti/Ge2Sb2Te5. After exposure to temperatures up to 440 degrees C, the thermal resistance results to be lower than expected despite both the formation of the TiTe2 phase, the depletion of Te inside Ge2Sb2Te5, and the non complete development of the hexagonal structure. Those observations have been also validated on the SiO2/Ge2Sb2Te5 stack with and without Ti interfacial layer. (C) 2014 AIP Publishing LLC.

引用

页数：5

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