Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

被引：23

作者：

Hahn, L. ^{[1
]}

Fuchs, F. ^{[1
,2
]}

Kirste, L. ^{[1
]}

Driad, R. ^{[1
]}

Rutz, F. ^{[1
]}

Passow, T. ^{[1
]}

Koehler, K. ^{[1
]}

Rehm, R. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] Fuchs Photon Solut, Jagerhausleweg 27A, D-79104 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 15期

关键词：

PHOTODIODES;

D O I：

10.1063/1.5022660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN based avalanche photodiodes grown on sapphire substrate with Al-contents of x = 0.65 and x = 0.60 have been examined under back- and frontside illumination with respect to their avalanche gain properties. The photodetectors suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 30 V reverse bias in the linear gain mode. Devices with a mesa diameter of 100 mu m exhibit stable avalanche gain below the break through threshold voltage, exceeding a multiplication gain of 5500 at 84 V reverse bias. A dark current below 1 pA can be found for reverse voltages up to 60 V. Published by AIP Publishing.

引用

页数：4

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