Chemical Bonding Configurations at the Interface of SiO2/Si(111)

被引：0

作者：

Bahari, A. ^{[1
]}

Suzban, M. ^{[1
]}

Rezai, L. ^{[1
]}

Rezai, M. ^{[1
]}

Roodbari, M. ^{[1
]}

Morgen, P. ^{[1
]}

机构：

[1] Univ Mazandaran, Fac Basic Sci, Dept Phys, Babol Sar, Iran

来源：

ASIAN JOURNAL OF CHEMISTRY | 2009年 / 21卷 / 02期

关键词：

Thin film; Nano transistor; Synchrotron radiation technique; Surface and Interface states; SILICON; GROWTH; FILMS; BAND;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The interface and near interface regions of SiO2/Si and related films have received attentions for several decades. Silicon dioxide has been used as a realistic gate dielectric material in complementary metal-oxide-semiconductor (CMOS) components because the interface between silicon dioxide and silicon substrate is amorphous. In the present work, ultra thin silicon dioxide (below one nm) films have been grown on Si(111) at 700 degrees C and the chemical bonding configurations of interface states between silicon dioxide and silicon substrate have been investigated with synchrotron radiation induced photoelectron spectroscopy.

引用

页码：1609 / 1615

页数：7

共 50 条

[41] Spin relaxation and coherence times for electrons at the Si/SiO2 interface
Shankar, S.
Tyryshkin, A. M.
He, Jianhua
Lyon, S. A.
PHYSICAL REVIEW B, 2010, 82 (19):
[42] The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding
Zhang, Xuan Xiong
Ye, Tian Chun
Zhuang, Song Lin
Jiao, Ji Wei
SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04): : 457 - 466
[43] Topography change due to multilayer oxidation at SiO2/Si(111) interfaces
Hojo, Daisuke
Oeda, Hitoshi
Tokuda, Norio
Yamabe, Kikuo
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (4 B): : 1903 - 1906
[44] Investigation of Bonding Characteristics Between Si Quantum Dots and a SiO2 Matrix
Park, Youngbin
Kim, Shinho
Moon, Jihyun
Lee, Jung Chul
Kim, Yangdo
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (02) : 1444 - 1447
[45] Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure
Du, X. W.
Li, H.
Lu, Y. W.
Sun, J.
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 59 - 62
[46] High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
Hertenberger, S.
Funk, S.
Vizbaras, K.
Yadav, A.
Rudolph, D.
Becker, J.
Bolte, S.
Doeblinger, M.
Bichler, M.
Scarpa, G.
Lugli, P.
Zardo, I.
Finley, J. J.
Amann, M. -C.
Abstreiter, G.
Koblmueller, G.
APPLIED PHYSICS LETTERS, 2012, 101 (04)
[47] Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO2 interface
Maida, O
Asano, A
Takahashi, M
Iwasa, H
Kobayashi, H
SURFACE SCIENCE, 2003, 542 (03) : 244 - 252
[48] Electron spin resonance study of the interaction of hydrogen with the (111)Si/SiO2 interface:: Pb-hydrogen interaction kinetics
Stesmans, A
PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 1015 - 1021
[49] Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formation
Kageshima, H
Shiraishi, K
SURFACE SCIENCE, 1997, 380 (01) : 61 - 65
[50] SiO2/Si interface oxidation and defects in O2 plasma processing
Nunomura, Shota
Tsutsumi, Takayoshi
Hori, Masaru
APPLIED PHYSICS EXPRESS, 2025, 18 (02)

← 1 2 3 4 5 →