Chemical Bonding Configurations at the Interface of SiO2/Si(111)

被引：0

作者：

Bahari, A. ^{[1
]}

Suzban, M. ^{[1
]}

Rezai, L. ^{[1
]}

Rezai, M. ^{[1
]}

Roodbari, M. ^{[1
]}

Morgen, P. ^{[1
]}

机构：

[1] Univ Mazandaran, Fac Basic Sci, Dept Phys, Babol Sar, Iran

来源：

ASIAN JOURNAL OF CHEMISTRY | 2009年 / 21卷 / 02期

关键词：

Thin film; Nano transistor; Synchrotron radiation technique; Surface and Interface states; SILICON; GROWTH; FILMS; BAND;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The interface and near interface regions of SiO2/Si and related films have received attentions for several decades. Silicon dioxide has been used as a realistic gate dielectric material in complementary metal-oxide-semiconductor (CMOS) components because the interface between silicon dioxide and silicon substrate is amorphous. In the present work, ultra thin silicon dioxide (below one nm) films have been grown on Si(111) at 700 degrees C and the chemical bonding configurations of interface states between silicon dioxide and silicon substrate have been investigated with synchrotron radiation induced photoelectron spectroscopy.

引用

页码：1609 / 1615

页数：7

共 50 条

[21] Energy barrier for valence electrons at SiO2/Si(111) interface
Takahashi, K
Bin Seman, M
Hirose, K
Hattori, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (3A): : L223 - L225
[22] THEORETICAL-STUDY OF THE GRADUAL CHEMICAL-TRANSITION AT THE SI-SIO2 INTERFACE .1. STRUCTURAL MODELS FOR THE SI(111)-SIO2 AND SI(100)-SIO2 INTERREGION
HUBNER, K
KLINKENBERG, ED
STERN, A
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 135 (02): : 475 - 485
[23] INFLUENCE OF THIN SIO2 INTERLAYERS ON CHEMICAL-REACTION AND MICROSTRUCTURE AT THE NI/SI(111) INTERFACE
LIEHR, M
LEFAKIS, H
LEGOUES, FK
RUBLOFF, GW
PHYSICAL REVIEW B, 1986, 33 (08): : 5517 - 5525
[24] INITIAL-STAGE OF SIO2 SI INTERFACE FORMATION ON SI(111) SURFACE
HATTORI, T
NOHIRA, H
TAMURA, Y
OGAWA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L638 - L641
[25] Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface
Stesmans, A
Nouwen, B
PHYSICAL REVIEW B, 2000, 61 (23): : 16068 - 16076
[26] INITIAL-STAGE OF SIO2/SI INTERFACE FORMATION ON SI(111) SURFACE
NOHIRA, H
TAMURA, Y
OGAWA, H
HATTORI, T
IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (07) : 757 - 763
[27] Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface
Stesmans, A
Nouwen, B
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 52 - 55
[28] Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems
Cao Bo
Bao Liang-Man
Li Gong-Ping
He Shan-Hu
ACTA PHYSICA SINICA, 2006, 55 (12) : 6550 - 6555
[29] NATURE OF CHEMICAL-BONDS IN SIO2/SI INTERFACE
HIROSE, M
HAYASHI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C134 - C134
[30] CHEMICAL AND ELECTRONIC STRUCTURE OF THE SiO2/Si INTERFACE.
Grunthaner, F.J.
Grunthaner, P.J.
Materials Science Reports, 1986, 1 (2-3): : 65 - 160

← 1 2 3 4 5 →