Cleaning by brush-scrubbing of chemical mechanical polished silicon surfaces using ozonized water and diluted HF

被引:24
作者
Kurokawa, Y [1 ]
Hirose, H [1 ]
Moriya, T [1 ]
Kimura, C [1 ]
机构
[1] Shibaura Mechatron Corp, Sakae Ku, Yokohama, Kanagawa 2478560, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期
关键词
cleaning; brush scrubbing; ozonized water; HF; particle; metal contamination; carbonaceous contamination; roughness; CMP;
D O I
10.1143/JJAP.38.5040
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new process for scrubbing chemical-mechanical-polished silicon wafer surfaces with a brush (brush-scrubbing process) was developed. The scrubbing is performed in two stages; the first stage involves a wet treatment using ozonized water and dilute HF. The second stage involves scrubbing with a Poly(vinyl alcohol)(PVA) brush. After scrubbing, the number of residual particles, metal and carbonaceous contamination, and surface roughness of the silicon wafer surface were evaluated. It was determined that this new brush-scrubbing process efficiently removed particles from chemical mechanical polished silicon surfaces. Finally, a model explaining the new brush-scrubbing process is constructed.
引用
收藏
页码:5040 / 5043
页数:4
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