Computing the equilibrium configuration of epitaxially strained crystalline films

被引:44
作者
Bonnetier, E [1 ]
Chambolle, A
机构
[1] Ecole Polytech, Ctr Math Appl, CNRS, UMR 7641, F-91128 Palaiseau, France
[2] Univ Paris 09, CEREMADE, CNRS, UMR 7534, F-75775 Paris 16, France
关键词
Gamma-convergence; epitaxially stressed films; shape instabilities;
D O I
10.1137/S0036139900368571
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
We study a model for shape instabilities of heteroepitaxial crystalline films. Lattice misfits between the substrate and the film induce elastic stresses in the film, which adjusts the shape of its free surface to reduce its total energy, sum of an elastic and a surface energy. We give a precise framework that guarantees the existence of solutions to this variational problem. We show that equilibrium states can be approximated using a two-phase model for representing the surface energy. Numerical results, obtained via this approximation, are presented.
引用
收藏
页码:1093 / 1121
页数:29
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