Ferroelectric enhancement of La-doped BaTiO3 thin films using SrTiO3 buffer layer

被引：21
作者：
Ali, Ahmed I. [1 ,3 ,4 ]
Park, Kibog [2 ]
Ullah, Amir [1 ]
Huh, Rock [3 ,4 ,5 ]
Kim, Y. S. [3 ,4 ]
机构：
[1] Helwan Univ, Fac Ind Educ, Dept Basic Sci, Cairo 11281, Egypt
[2] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea
[3] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea
[4] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[5] SUNY Binghamton, Dept Phys Appl Phys & Astron, Binghamton, NY 13902 USA
来源：
THIN SOLID FILMS | 2014年 / 551卷
基金：
新加坡国家研究基金会;
关键词：
Polarization; Ferroelectric; SrTiO(3)buffer layer; La-doped BaTiO thin film(3); Pulsed laser deposition; DIELECTRIC-PROPERTIES; FERROMAGNETISM;
D O I：
10.1016/j.tsf.2013.11.048
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pulsed laser deposition (PLD) was used to fabricate La0.01Ba0.99TiO3 (LBTO) thin films on MgO/TiO2/SiO2/Si substrates with and without SrTiO3 (STO) buffer layer. LBTO films deposited on STO layers exhibited enhanced ferroelectricity and decreased leakage current (9 x 10(-7) A/cm(2) at 50 kV/cm), conductivity, and Hall mobility, compared to those of LBTO films on MgO substrate. The remanent polarization (P-r) and coercive field (E-c) for LBTO thin films on STO buffered MgO substrate dramatically improved, 36.5 mu C/cm(2) and similar to 220 kV/cm, compared to those for LBTO thin films on MgO substrate, 3 mu C/cm(2) and similar to 60 kV/cm. The degradation of P-r and E-c after 10(5) switching test is less than 0.1% for LBTO thin films on STO buffered MgO substrate. This work demonstrates a route to a lead-free ferroelectric thin film for nonvolatile memories and electro-optic devices. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：127 / 130
页数：4
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