Sputter deposition of Al-doped ZnO films with various incident angles

被引:29
作者
Sato, Yasushi [1 ]
Yanagisawa, Kei [1 ]
Oka, Nobuto [1 ]
Nakamura, Shin-ichi [2 ]
Shigesato, Yuzo [1 ]
机构
[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Kanagawa 2298558, Japan
[2] Aoyama Gakuin Univ, Ctr Instrumental Anal, Kanagawa 2298558, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 05期
关键词
aluminium; doping profiles; heating; II-VI semiconductors; semiconductor thin films; sputter deposition; texture; transmission electron microscopy; wide band gap semiconductors; X-ray diffraction; zinc compounds; ZINC-OXIDE-FILMS; PULSED-LASER DEPOSITION; THIN-FILMS; OPTICAL-PROPERTIES; INDIUM OXIDE; TEXTURE; GROWTH; ORIENTATION; ANISOTROPY; STRESS;
D O I
10.1116/1.3186618
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degrees C under incident angles of sputtered particles at 0 degrees (incidence normal to substrate), 20 degrees, 40 degrees, 60 degrees, and 80 degrees. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degrees, the [001] orientation inclined by 25 degrees-35 degrees toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.
引用
收藏
页码:1166 / 1171
页数:6
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