A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory

被引：0

作者：

Puglisi, Francesco Maria ^{[1
]}

Pavan, Paolo ^{[1
]}

Padovani, Andrea ^{[2
]}

Larcher, Luca ^{[2
]}

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Ingn Enzo Ferrari, Via Vignolese 905-A, I-41125 Modena, MO, Italy

[2] Univ Modena, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy

来源：

2013 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) | 2013年

关键词：

Compact Model; RRAM; Resistive Switching; Hafnium Oxide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations. Simple I-V measurements are used to extract the model parameters. The model accurately reproduces the I-V curves of the switching cycles in different operating conditions.

引用

页码：85 / 88

页数：4

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