Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

The authors have investigated the dependence of the critical current density (J(c)) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H-hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The J(c) and the intrinsic current density (J(c0)), derived from the dependence of the J(c) on the pulse duration, decreased as parallel to H-hard parallel to increased. These reductions of J(c) and J(c0) would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency. (c) 2006 American Institute of Physics.