Controlled one-dimensional nanostructures in poly(3-hexylthiophene) thin film for high-performance organic field-effect transistors

被引：96

作者：

Kim, Do Hwan ^{[1
]}

Jang, Yunseok ^{[1
]}

Park, Yeong Don ^{[1
]}

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2006年 / 110卷 / 32期

关键词：

D O I：

10.1021/jp062899y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

With the aim of improving the field-effect mobilities in poly(3-hexylthiophene) (P3HT) thin film transistors, we controlled the nanostructures of P3HT thin film by changing the solvent vapor pressure in a spin-coating chamber during solidification. The transistors with P3HT thin films spin-coated under a high solvent vapor pressure (56.5 KPa), showing the one-dimensional nanowire morphologies, resulted in the relatively high field-effect mobilities (0.02 cm(2)/( V(.)s)) that are typically more than 1 order of magnitude higher than those prepared under ambient conditions, showing the featureless morphologies. This can be attributed to the higher solvent vapor pressure during film formation, providing the solvent is allowed to evaporate slowly and the degree of ordering within the P3HT crystalline domains is dramatically improved.

引用

页码：15763 / 15768

页数：6

共 40 条

[1] Morphology and field-effect mobility of charge carriers in binary blends of poly(3-hexylthiophene) with poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] and polystyrene [J].