Analysis and simulation for current-voltage models of thin-film gated SOI lateral PIN photodetectors

被引：10

作者：

Li, Guoli ^{[1
]}

Zeng, Yun ^{[1
]}

Hu, Wei ^{[1
]}

Xia, Yu ^{[1
]}

机构：

[1] Hunan Univ, Coll Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China

来源：

OPTIK | 2014年 / 125卷 / 01期

基金：

中国国家自然科学基金;

关键词：

LPIN; Photodetector; SOI; Depletion voltage; Photocurrent; PHOTODIODE;

D O I：

10.1016/j.ijleo.2013.07.030

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Based on the semiconductor-device structure and equations, we analyze the operation principles of thin-film gated silicon-on insulator (SOI) Lateral PIN (LPIN) photodetectors, and obtain current-voltage models. With 800 nm film thickness and 8 mu m channel length, we validate these models by two-dimensional (2D) Atlas numerical measurements and electrical simulations, including carriers distributions and current-voltage characteristics. In fully-depleted condition, our results predict the internal quantum efficiency as high as 97% at 400 nm wavelength, a very low dark current around 1 pA and a high ratio of more than 10(7) between illuminated to dark current with low-voltage operation. Optimizing the performances of photodetectors, our models have highly potential applications in optical storage systems. (C) 2013 Elsevier GmbH. All rights reserved.

引用

页码：540 / 544

页数：5

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