Fabrication of two-dimensional MoS2 thin-film transistors using a reactive thermal evaporation method combined with an annealing step

被引:1
作者
Park, Tae-Kwang [1 ]
Lee, Ho-Nyeon [2 ]
机构
[1] Soonchunhyang Univ, Dept Elect & Robot Engn, Asan, South Korea
[2] Soonchunhyang Univ, Dept Elect & Informat Engn, Asan, South Korea
基金
新加坡国家研究基金会;
关键词
Annealing; MoS2; thermal evaporation; thin-film transistor; two dimensional; MONOLAYER;
D O I
10.1080/15421406.2018.1466234
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2-D) MoS2 films were fabricated by reactive thermal evaporation combined with thermal annealing. The 2-D nature of the MoS2 films is demonstrated by observation of direct transition and a Van Hove singularity in the absorbance curve. The 1T phase MoS2 is confirmed by X-ray photoelectron spectroscopy. MoS2 thin-film transistors (TFTs) are fabricated using the MoS2 active layer transferred onto an oxidized Si wafer from a sapphire wafer. The MoS2 TFT demonstrates a threshold voltage of 37.6V, a field-effect mobility of 6.94 cm(2)V(-1)s(-1) a sub-threshold swing of 29.2 V/dec and a switching ratio of 10(3).
引用
收藏
页码:2 / 8
页数:7
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