Fabrication of two-dimensional MoS2 thin-film transistors using a reactive thermal evaporation method combined with an annealing step

被引：1

作者：

Park, Tae-Kwang ^{[1
]}

Lee, Ho-Nyeon ^{[2
]}

机构：

[1] Soonchunhyang Univ, Dept Elect & Robot Engn, Asan, South Korea

[2] Soonchunhyang Univ, Dept Elect & Informat Engn, Asan, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2018年 / 662卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Annealing; MoS2; thermal evaporation; thin-film transistor; two dimensional; MONOLAYER;

D O I：

10.1080/15421406.2018.1466234

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-dimensional (2-D) MoS2 films were fabricated by reactive thermal evaporation combined with thermal annealing. The 2-D nature of the MoS2 films is demonstrated by observation of direct transition and a Van Hove singularity in the absorbance curve. The 1T phase MoS2 is confirmed by X-ray photoelectron spectroscopy. MoS2 thin-film transistors (TFTs) are fabricated using the MoS2 active layer transferred onto an oxidized Si wafer from a sapphire wafer. The MoS2 TFT demonstrates a threshold voltage of 37.6V, a field-effect mobility of 6.94 cm(2)V(-1)s(-1) a sub-threshold swing of 29.2 V/dec and a switching ratio of 10(3).

引用

页码：2 / 8

页数：7

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