Co-doping effects and electrical transport in In-N doped zinc oxide

被引：14
作者：
Chen, L. L.
Ye, Z. Z. [1 ]
Lu, J. G.
He, H. P.
Zhao, B. H.
Zhu, L. P.
Chu, Paul K.
Shao, L.
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[3] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
来源：
CHEMICAL PHYSICS LETTERS | 2006年 / 432卷 / 1-3期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/j.cplett.2006.10.047
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of indium concentrations on electrical properties of In-N co-doped ZnO thin films has been studied. Based on Hall-effect measurements and analyses, impurity scattering is the dominant mechanism determining the diminished mobility in ZnO with higher In concentration. X-ray photoelectron spectroscopy reveals that the presence of In enhances the solubility of N with the formation of In-N and Zn-N bonds. The optimal properties, namely resistivity of 16.1 Omega cm and Hall mobility of 1.13 cm(2) V-1 s(-1), are obtained at an indium concentration of 0.14 at.%. The diffraction angle of co-doped ZnO is closest to that of un-doped ZnO. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：352 / 355
页数：4
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