High-performance InGaAs-InGaAlAs 1.83 μm lasers

被引：7

作者：

Kuang, GK ^{[1
]}

Böhm, G ^{[1
]}

Grau, M ^{[1
]}

Rösel, G ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 07期

关键词：

D O I：

10.1049/el:20000484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.83 mu m InGaAs-InGaAlAs strained-layer quantum well (QW) lasers have been fabricated. A CW threshold current density of 290A/cm(2) at 15 degrees C, a characteristic temperature of 65K and a maximum CW operating temperature of 94 degrees C have been achieved.

引用

页码：634 / 636

页数：3

共 9 条

[1] Low-threshold and high-temperature operation of InGaAlAs-InP lasers [J].

Chen, TR ;

Chen, PC ;

Ungar, J ;

Newkirk, MA ;

Oh, S ;

BarChaim, N .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (01) :17-18

[2] ROOM-TEMPERATURE OPERATION OF MOCVD-GROWN GAINAS/INP STRAINED-LAYER MULTIQUANTUM WELL LASERS IN 1-BULLET-8-MU-M RANGE [J].

FOROUHAR, S ;

LARSSON, A ;

KSENDZOV, A ;

LANG, RJ ;

TOTHILL, N ;

SCOTT, MD .

ELECTRONICS LETTERS, 1992, 28 (10) :945-947

[3] High power efficient GaInAsP/InP (1.9μm) laser diode arrays [J].

He, X ;

Xu, D ;

Ovtchinnikov, A ;

Malarayap, F ;

Supe, R ;

Wilson, S ;

Patel, R .

ELECTRONICS LETTERS, 1999, 35 (05) :397-398

[4] Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers [J].

Higashi, T ;

Sweeney, SJ ;

Phillips, AF ;

Adams, AR ;

O'Reilly, EP ;

Uchida, T ;

Fujii, T .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (04) :409-411

[5] 11.5-W CW 1.83-μm diode laser array [J].

Maiorov, M ;

Menna, R ;

Khalfin, V ;

Milgazo, H ;

Matarese, R ;

Garbuzov, D ;

Connolly, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :961-963

[6] 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power [J].

Mitsuhara, M ;

Ogasawara, M ;

Oishi, M ;

Sugiura, H ;

Kasaya, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) :33-35

[7] Record high characteristic temperature (To = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier [J].

Ohnoki, N ;

Okazaki, G ;

Koyama, F ;

Iga, K .

ELECTRONICS LETTERS, 1999, 35 (01) :51-52

[8] High temperature characteristics of strained InGaAs/InGaAlAs quantum well lasers [J].

Park, SH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (6A) :3528-3530

[9] ULTRAHIGH TEMPERATURE AND ULTRAHIGH-SPEED OPERATION OF 1.3-MU-M STRAIN-COMPENSATED ALGAINAS/INP UNCOOLED LASER-DIODES [J].

WANG, MC ;

LIN, W ;

SHI, TT ;

TU, YK .

ELECTRONICS LETTERS, 1995, 31 (18) :1584-1585

← 1 →