High-performance InGaAs-InGaAlAs 1.83 μm lasers

被引：7

作者：

Kuang, GK ^{[1
]}

Böhm, G ^{[1
]}

Grau, M ^{[1
]}

Rösel, G ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 07期

关键词：

D O I：

10.1049/el:20000484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.83 mu m InGaAs-InGaAlAs strained-layer quantum well (QW) lasers have been fabricated. A CW threshold current density of 290A/cm(2) at 15 degrees C, a characteristic temperature of 65K and a maximum CW operating temperature of 94 degrees C have been achieved.

引用

页码：634 / 636

页数：3

共 9 条

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