MXene Ti3C2Tx as a passive Q-switcher for erbium-doped fiber laser

被引:34
作者
Jafry, A. A. A. [1 ]
Krishnan, G. [1 ,2 ,3 ]
Kasim, N. [1 ]
Zulkipli, N. F. [3 ]
Samsamnun, F. S. M. [3 ]
Apsari, R. [4 ,5 ]
Harun, S. W. [3 ,4 ]
机构
[1] Univ Teknol Malaysia, Dept Phys, Fac Sci, Skudai 81310, Kagawa, Malaysia
[2] Univ Teknol Malaysia, Laser Ctr, Ibnu Sina Inst Sci & Ind Res, Johor Baharu, Malaysia
[3] Univ Malaya, Fac Engn, Dept Elect Engn, Photon Engn Lab, Kuala Lumpur 50603, Malaysia
[4] Airlangga Univ, Fac Vocat Studies, Dept Engn, Surabaya, Indonesia
[5] Airlangga Univ, Fac Sci & Technol, Dept Phys, Surabaya, Indonesia
关键词
A layered metal carbide/nitride; Passive saturable absorber; Q-switching; Fiber laser; SATURABLE ABSORBER; FEMTOSECOND;
D O I
10.1016/j.yofte.2020.102289
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A layered metal carbide/nitride known as MXene owns superior optical properties such as high optical damage tolerance, fast-optical switching capability, and excellent nonlinear transmittance property, making it a favourable SA device for a fiber laser cavity. We synthesis the MXene Ti3C2Tx using selective etching and developed two SA devices, which were MXene-film and MXene D-shaped fiber (MXene-DS). The optical properties of the as-prepared SA devices were investigated, and MXene-DS shows a significant improvement in terms of nonlinear transmittance with 3% modulation depth and 58.5% nonlinear loss. The SA devices were then incorporated into an EDFL and generated Q-switched lasers at the threshold pump power of 44 mW for MXene-film and 81 mW for MXene-DS. The MXene-film initiates a stable Q-switched with a minimum pulse width of 2.31 mu s whereas, MXene-DS exhibit a pulsed laser with a minimum pulse width of 2.58 mu s. MXene-DS shows excellent pulse stability at a high pumping power, making it a suitable SA device for EDFL.
引用
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页数:7
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