Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb

被引：44
作者：
Qin, J. M. [1 ,2 ]
Yao, B. [1 ,3 ,4 ]
Yan, Y. [3 ,4 ]
Zhang, J. Y. [1 ]
Jia, X. P. [3 ,4 ]
Zhang, Z. Z. [1 ]
Li, B. H. [1 ]
Shan, C. X. [1 ]
Shen, D. Z. [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China
[2] Inner Mongolia Univ Nationalities, Tongliao 028043, Peoples R China
[3] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China
[4] Jilin Univ, State Key Lab Superhard Mat, Changchun 130023, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期
基金：
中国国家自然科学基金;
关键词：
antimony; carrier density; carrier mobility; electrical resistivity; high-pressure effects; II-VI semiconductors; impurity states; semiconductor doping; sintering; vacancies (crystal); wide band gap semiconductors; zinc compounds; THIN-FILMS; DEPOSITION; EPITAXY;
D O I：
10.1063/1.3153515
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Stable p-type Sb-doped ZnO (ZnO:Sb) was fabricated reproducibly by sintering mixture of ZnO and Sb2O3 powders under 5 GPa at temperatures of 1100-1450 degrees C. The best p-type ZnO:Sb with resistivity of 1.6x10(-2) cm, carrier concentration of 3.3x10(20) cm(-3), and mobility of 12.1 cm/V s was obtained by doping 4.6 at. % Sb and sintering at 1450 degrees C. The p-type conduction is due to complex acceptor formed by one substitutional Sb at Zn site and two Zn vacancies. The acceptor level was measured to be 113 meV. Effect of pressure on formation and electrical properties of the p-type ZnO:Sb is discussed.
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