Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors

被引：540
作者：
Zhou, Xing [1 ]
Gan, Lin [1 ]
Tian, Wenming [2 ]
Zhang, Qi [1 ]
Jin, Shengye [2 ]
Li, Huiqiao [1 ]
Bando, Yoshio [3 ]
Golberg, Dmitri [3 ]
Zhai, Tianyou [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
[2] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Liaoning, Peoples R China
[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 48期
关键词：
THIN-FILMS; LARGE-AREA; INSE NANOSHEETS; METAL CONTACTS; CRYSTAL-GROWTH; ATOMIC LAYERS; MOS2; PHOTOTRANSISTORS; GAS; ULTRAVIOLET;
D O I：
10.1002/adma.201503873
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
High-quality ultrathin single-crystalline SnSe2 flakes are synthesized under atmospheric-pressure chemical vapor deposition for the first time. A high-performance photodetector based on the individual SnSe2 flake demonstrates a high photoresponsivity of 1.1 x 10(3) A W-1, a high EQE of 2.61 x 10(5)%, and superb detectivity of 1.01 x 10(10) Jones, combined with fast rise and decay times of 14.5 and 8.1 ms, respectively.
引用
收藏
页码：8035 / 8041
页数：7
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