Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

被引：23

作者：

Lin, C. H. ^{[1
,2
,3
]}

Lin, H. S. ^{[2
,3
]}

Huang, C. C. ^{[1
]}

Su, S. K. ^{[2
,3
]}

Lin, S. D. ^{[2
,3
]}

Sun, K. W. ^{[1
]}

Lee, C. P. ^{[2
,3
]}

Liu, Y. K. ^{[4
]}

Yang, M. D. ^{[4
]}

Shen, J. L. ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect Engn, Hsinchu 30010, Taiwan

[4] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 18期

关键词：

dark states; excitons; gallium arsenide; III-V semiconductors; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; time resolved spectra; EXCITONS;

D O I：

10.1063/1.3130741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.

引用

页数：3

共 21 条

[1] Continuum and discrete excitation spectrum of single quantum rings -: art. no. 155331 [J].