A review of large-area bilayer graphene synthesis by chemical vapor deposition

被引：75

作者：

Fang, Wenjing ^{[1
]}

Hsu, Allen L. ^{[1
,2
]}

Song, Yi ^{[1
]}

Kong, Jing ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[2] Stanford Res Inst Int, Menlo Pk, CA 94025 USA

来源：

NANOSCALE | 2015年 / 7卷 / 48期

关键词：

CU-NI ALLOY; THERMAL-DECOMPOSITION; HIGH-QUALITY; EPITAXIAL GRAPHENE; MONOLAYER GRAPHENE; GROWTH-MECHANISM; SINGLE-LAYER; CARBON; FILMS; COPPER;

D O I：

10.1039/c5nr04756k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bilayer graphene has attracted considerable attention due to its potential as a tunable band gap in AB-stacked bilayers. Recently, great advancements have been made in the synthesis of chemical-vapor-deposited bilayer graphene. This featured article provides a detailed and up-to-date review of the synthesis of bilayer graphene by chemical vapor deposition (CVD). We will discuss various approaches to synthesize bilayer graphene and the corresponding growth dynamics. Methods for identifying the growth mechanism of bilayer graphene on Cu enclosures are highlighted for a deeper understanding of better control over uniformity and thickness.

引用

页码：20335 / 20351

页数：17

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