Modified chemical synthesis of porous α-Sm2S3 thin films

被引：16

作者：

Kumbhar, V. S. ^{[1
]}

Jagadale, A. D. ^{[1
]}

Gaikwad, N. S. ^{[2
]}

Lokhande, C. D. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

[2] Rayat Shikshan Sanstha, Satara 415001, MS, India

来源：

MATERIALS RESEARCH BULLETIN | 2014年 / 56卷

关键词：

Thin films; Chemical synthesis; X-ray diffraction; Atomic force microscopy; Crystal structure;

D O I：

10.1016/j.materresbull.2014.04.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper reports synthesis of porous alpha-Sm2S3 thin films using modified chemical synthesis, also known as successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), wettability and ultraviolet-visible spectroscopy (UV-vis) techniques are used for the study of structural, elemental, morphological and optical properties of alpha-Sm2S3 films. An orthorhombic crystal structure of alpha-Sm2S3 is resulted from XRD study. The SEM and AFM observations showed highly porous alpha-Sm2S3 film surface. An optical band gap of 2.50 eV is estimated from optical absorption spectrum. The porous alpha-Sm2S3 thin film tuned for supercapacitive behaviour using cyclic voltammetry and galvanostatic charge discharge showed a specific capacitance and energy density of 294 Fg(-1) and 48.9 kWkg(-1), respectively in 1 M LiClO4-propylene carbonate electrolyte. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：39 / 44

页数：6

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