A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

被引：2
|
作者：
Munteanu, D. [1 ]
Moreau, M. [1 ]
Autran, J. L. [1 ,2 ]
机构：
[1] Inst Mat Microelect Nanosci Provence, IM2NP, CNRS, UMR 6242, F-13384 Marseille 13, France
[2] Inst Univ France, Paris, France
来源：
MOLECULAR SIMULATION | 2009年 / 35卷 / 06期
关键词：
independently driven double-gate MOSFET; ballistic transport; quantum effects; subthreshold current model; THRESHOLD VOLTAGE; TRANSPORT; QUANTIZATION; CONFINEMENT; SIMULATION; INVERSION; DESIGN;
D O I：
10.1080/08927020902801548
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present an analytical model for the subthreshold characteristic of ultra-thin independent double-gate (IDG) MOSFETs working in the ballistic regime. This model takes into account short-channel effects, quantisation effects and source-to-drain tunnelling (Wentzel-Kramers-Brillouin (WKB) approximation) in the expression of the subthreshold drain current. Important device parameters, such as off-state current or subthreshold swing, can be easily evaluated through this full analytical approach. The model can be successfully implemented in a Technologies Computer-Aided Design (TCAD) circuit simulator for the simulation of IDG MOSFET- based circuits.
引用
收藏
页码：491 / 497
页数：7
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