An All-MOSFET Sub-1-V Voltage Reference With a-51-dB PSR up to 60 MHz

被引：27

作者：

Alhassan, Nashiru ^{[1
]}

Zhou, Zekun ^{[1
]}

Sinencio, Edgar Snchez ^{[1
]}

机构：

[1] Texas A&M Univ, Analog Mixed Signal Ctr, College Stn, TX 77843 USA

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2017年 / 25卷 / 03期

关键词：

All-MOSFET; dynamic threshold MOS transistor (DTMOS); high power supply rejection (PSR); nonbandgap; resistorless; sub-1; V; voltage reference (VR); PPM/DEGREES-C; CMOS; BANDGAP; CIRCUITS;

D O I：

10.1109/TVLSI.2016.2614438

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a voltage reference (VR) with a power supply rejection (PSR) better than 50 dB for frequencies of up to 60 MHz, and uses MOSFETs in strong inversion. Another innovation is a compact MOSFET low-pass filter, which was developed along with a feedback technique for a wide-bandwidth PSR not achieved in previous works. The proposed all-MOSFET VR was fabricated using a standard 0.18 mu m CMOS process. It achieves a minimum temperature coefficient of 6.5 ppm/degrees C for temperatures from -30 degrees C to 110 degrees C. The line regulation is 0.076%/V for a step from 0.8 to 2.2 V supply voltage with 360 nW power consumption at room temperature and an area of 0.0143 mm(2).

引用

页码：919 / 928

页数：10

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