High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

被引：89

作者：

Lee, Gwang Jun ^{[1
]}

Kim, Joonwoo ^{[2
]}

Kim, Jung-Hye ^{[2
]}

Jeong, Soon Moon ^{[2
]}

Jang, Jae Eun ^{[1
]}

Jeong, Jaewook ^{[2
]}

机构：

[1] DGIST, Dept Informat & Commun Engn, Taegu 711873, South Korea

[2] DGIST, Nano & Bio Res Div, Taegu 711873, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 03期

关键词：

a-IGZO; a-InGaZnO; thin-film transistors; bending; thin glass substrate; bias stress; AMORPHOUS OXIDE SEMICONDUCTORS; FILM TRANSISTORS;

D O I：

10.1088/0268-1242/29/3/035003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated electrical properties of transparent amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) transparent electrodes on a flexble thin glass substrate. The TFTs show a high field-effect mobility, a good subthreshold slope and a high on/off ratio owing to the high temperature thermal annealing process which cannot be applied to typical transparent polymer-based flexible substrates. Bias stress instability tests applying tensile stress concurrently with the bending radius of up to 40 mm indicated that mechanically and electrically stable a-IGZO TFTs can be fabricated on the transparent thin glass substrate.

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