Synthesis, Characterization of Cr Doped TeO2 Nanostructures and its Application as EGFET pH Sensor

被引：32

作者：

Adimule, Vinayak ^{[1
]}

Revaiah, R. G. ^{[2
]}

Nandi, Santosh S. ^{[3
]}

Jagadeesha, Adarsha Haramballi ^{[4
]}

机构：

[1] Angadi Inst Technol & Management AITM, Dept Chem, VTU Recognized Res Ctr Chem, Savagaon Rd, Belagavi 5800321, Karnataka, India

[2] Minist Def, Def Res Dev Org, DEBEL, ADE Campus, Bangalore 560093, Karnataka, India

[3] KLE Dr MS Sheshgiri Coll Engn & Technol, Dept Engn Sci & Humanities, Chem Sect, VTU Recognized Res Ctr Chem, Belagavi 590008, Karnataka, India

[4] Natl Univ Ireland, Ctr Res Med Devices, Galway H91TK33, Ireland

来源：

ELECTROANALYSIS | 2021年 / 33卷 / 03期

关键词：

Cr; TeO2; pH sensitivity; EGFET; Ionic conductivity; Nanostructures; FIELD-EFFECT TRANSISTOR; SENSING MEMBRANE; HEXAVALENT CHROMIUM; GOLD NANOPARTICLES; NITRIDE MEMBRANE; TELLURIUM OXIDE; GLASS; TIO2; PERFORMANCE; FABRICATION;

D O I：

10.1002/elan.202060329

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In the present work, Cr doped tellurium dioxide nanostructures (CTO NS)(1 wt %, 6 wt %, 8 wt % and 12 wt %) synthesized by co precipitation method and characterized by CV, UV-Visible, SEM, XRD, XPS spectroscopic analysis. Electron beam deposited thin film of CTO NS having 12 wt % of Cr exhibited EGFET-pH sensitivity of 62.03 mV/pH at 250 degrees C in buffer solutions of pH 6-12, linearity 0.9345, drift rate of 1.12 mV/h and deviation of 0.01145 as compared with 1 wt %, 6 wt % and 8 wt % of CTO NS.

引用

页码：579 / 590

页数：12

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